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Preliminary data
BSO 315 C
SIPMOS (R) Small-Signal-Transistor
Features * Dual N- and P -Channel
*
Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current
N
P -30 0.25 -2.3 V A
VDS RDS(on) ID
30 0.11 3.4
Enhancement mode
* Logic Level * Avalanche rated * dv/dt rated
Type BSO 315 C
Package SO 8
Ordering Code Q67041-S4014
Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol N Continuous drain current
Value P
Unit A
ID
3.4 2.7 -2.3 -1.8 -7.2
T A = 25 C T A = 70 C
Pulsed drain current
I D puls EAS
11.6
T A = 25 C
Avalanche energy, single pulse mJ 25 35 0.2 kV/s 6 6 20 2 V W C
I D = 2.9 A, V DD = 25 V, R GS = 25 I D = -1.8 A, V DD = -25 V, R GS = 25
Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt, T jmax = 150 C
EAR
dv/dt
0.2
I S = 2.9 A, V DS = 24 , di/dt = 200 A/s I S = -1.8 A, V DS = -24 , di/dt = -200 A/s
Gate source voltage Power dissipation
VGS Ptot T j , T stg
20 2
T A = 25 C
Operating and storage temperature IEC climatic category; DIN IEC 68-1 -55...+150 55/150/56
Page 1
1999-09-22
Preliminary data Termal Characteristics Parameter Dynamic Characteristics Thermal resistance, junction - soldering point (Pin 5, 6, 7, 8) SMD version, device on PCB: @ min. footprint; t 10 sec. @ 6 cm 2 cooling area 1) ; t 10 sec. @ min. footprint; t 10 sec. @ 6 cm 2 cooling area 1) ; t 10 sec. N N P P N RthJS P Symbol min.
BSO 315 C
Values typ. max. 40 40 100 62.5 70 62.5
Unit
K/W
RthJA
Static Characteristics, at Tj = 25 C, unless otherwise specified Drain- source breakdown voltage
V(BR)DSS
N P 30 -30 1.6 -1.5 0.1 10 -0.1 -10 2 -2.0
V
VGS = 0 V, ID = 250 A VGS = 0 V, ID = -250 A
Gate threshold voltage, VGS = VDS ID = 20 A
VGS(th)
N P 1.2 -1
ID = -230 A
Zero gate voltage drain current
IDSS
N N P P 1 100 -1 -100
A
VDS = 30 V, VGS = 0 V, Tj = 25 C VDS = 30 V, VGS = 0 V, Tj = 125 C VDS = -30 V, VGS = 0 V, Tj = 25 C VDS = -30 V, VGS = 0 V, Tj = 125 C
Gate-source leakage current
IGSS
N P 10 -10 0.1 0.2 0.06 0.13 100 -100
nA
VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V
Drain-Source on-state resistance
RDS(on)
N P 0.15 0.4
VGS = 4.5 V, ID = 2.9 A VGS = -4.5 V, ID = -1.8 A
Drain-Source on-state resistance
RDS(on)
N P 0.11 0.25
VGS = 10 V, ID = 3.4 A VGS = -10 V , ID = -2.3 A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air.
Page 2
1999-09-22
Preliminary data Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Characteristics Transconductance Symbol min.
BSO 315 C
Values typ. max.
Unit
gfs
N P 2.2 1.6 4.5 3.2 200 200 93 113 50 38 15 22 96 71 13 56 20 61 -
S
VDS2 * I D * R DS(on)max, ID = 2.9 A VVDS2 * I D * R DS(on)max, ID = -1.8 A
Input capacitance
Ciss
N P 250 250 116 140 63 48
pF
VGS = 0 V, V DS = 25 V, f = 1 MHz VGS = 0 V, V DS = -25 V, f = 1 MHz
Output capacitance
Coss
N P -
VGS = 0 V, V DS = 25 V, f = 1 MHz VGS = 0 V, V DS = -25 V, f = 1 MHz
Reverse transfer capacitance
Crss
N P -
VGS = 0 V, V DS = 25 V, f = 1 MHz VGS = 0 V, V DS = -25 V, f = 1 MHz
Turn-on delay time
td(on)
N P 22 33 144 107 20 84 30 90
ns
VDD = 15 V, VGS = 4.5 V, I D = 2.9 A, RG = 33 VDD = -15 V, V GS = -4.5 V, I D = -1.8 A, R G = 24
Rise time
tr
N P -
VDD = 15 V, VGS = 4.5 V, I D = 2.9 A, RG = 33 VDD = -15 V, V GS = -4.5 V, I D = -1.8 A, R G = 24
Turn-off delay time
td(off)
N P -
VDD = 15 V, VGS = 4.5 V, I D = 2.9 A, RG = 33 VDD = -15 V, V GS = -4.5 V, I D = -1.8 A, R G = 24
Fall time
tf
N P -
VDD = 15 V, VGS = 4.5 V, I D = 2.9 A, RG = 33 VDD = -15 V, V GS = -4.5 V, I D = -1.8 A, R G = 24
Page 3
1999-09-22
Preliminary data Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Characteristics Gate to source charge Symbol min.
BSO 315 C
Values typ. max.
Unit
Qgs
N P 1.1 1.1 3.3 2.1 7.8 7 3.5 -2.8 1.6 1.6 5 3.2 11.7 10
nC
VDD = 24 V, ID = 3.4 A VDD = -24 V, ID = -2.3 A
Gate to drain charge
Qgd
N P -
VDD = 24 V, ID = 3.4 A VDD = -24 V, ID = -2.3 A
Gate charge total
Qg
N P -
VDD = 24 V, ID = 3.4 A, VGS = 0 to 10V VDD = -24 V, ID = -2.3 A, VGS = 0 to -10V
Gate plateau voltage
V(plateau)
N P -
V
VDD = 24 V, ID = 3.4 A VDD = -24 V, ID = -2.3 A
Reverse Diode Inverse diode continuous forward current
N IS P N ISM P
-
0.85
2.9 -1.8 11.6 -7.2
A
T A = 25 C
Inverse diode direct current,pulsed
T A = 25 C
Inverse diode forward voltage
VSD
N P 1.1 -0.85 -1.1
V
VGS = 0 V, I F = I S VGS = 0 V, I F = I S
Reverse recovery time
trr
N P 25 60 12 37 38 90
ns
VR = 15 V, IF=l S, di F/dt = 100 A/s VR = -15 V, IF=l S , diF/dt = -100 A/s
Reverse recovery charge
Qrr
N P 18 55
C
VR = 15 V, IF=l S , diF/dt = 100 A/s VR = -15 V, I F=lS, diF/dt = -100 A/s
Page 4
1999-09-22
Preliminary data Power Dissipation (N-Ch.) Power Dissipation (P-Ch.)
BSO 315 C
Ptot = f (TA)
BSO 315 C
Ptot = f (TA )
BSO 315 C
2.2
2.2
W
1.8 1.6
W
1.8 1.6
Ptot
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120
Ptot
C
1.4 1.2 1.0 0.8 0.6 0.4 0.2
160
0.0 0
20
40
60
80
100
120
C
160
TA
TA
Drain current (N-Ch.)
Drain current (P-Ch.)
I D = f (T A)
parameter: VGS 10 V
BSO 315 C
ID = f (TA)
parameter: VGS -10 V
BSO 315 C
3.6
-2.6
A
A
-2.2 2.8 2.4 -2.0 -1.8
ID
ID
2.0 1.6 1.2 0.8 0.4 0.0 0
-1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2
20
40
60
80
100
120
C
160
0.0 0
20
40
60
80
100
120
C
160
TA
Page 5
TA
1999-09-22
Preliminary data Safe operating area (N-Ch.) Safe operating area (P-Ch.)
BSO 315 C
I D = f ( VDS )
parameter : D = 0 , T A = 25 C
10 2
BSO 315 C
ID = f ( VDS )
parameter : D = 0 , TA = 25 C
-10 1
BSO 315 C
tp = 460.0s
DS
A
A
DS (o n
/I
D
/I D
tp = 100.0s
=
ID
10 0
10 ms
ID
RD
S(
on
)
-10 0
1 ms
R
10 1
VD
S
)
=
V
1 ms
10 ms
-10 -1 10 -1 DC DC
10 -2 -1 10
10
0
10
1
V
10
2
-10 -2 -1 -10
-10
0
-10
1
V
-10
2
VDS
VDS
Transient thermal impedance (N-Ch.)
Transient thermal impedance (P-Ch.)
Z thJC = f(t p)
parameter : D = tp/T
10
2
ZthJC = f(tp)
parameter : D = tp /T
10 2
BSO 315 C
BSO 315 C
K/W
K/W
10 1
10 1
Z thJC
10 0 D = 0.50 0.20 single pulse 10 -1 0.10 0.05 0.02 0.01
Z thJC
10 0 D = 0.50 0.20 0.10 10 -1 single pulse 0.05 0.02 0.01 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10
s 10 4
10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10
s
10
4
tp
Page 6
tp
1999-09-22
Preliminary data Typ. output characteristics (N-Ch.)
BSO 315 C
Typ. output characteristics (P-Ch.)
I D = f (VDS)
parameter: tp = 80 s
BSO 315 C
ID = f (VDS )
parameter: tp = 80 s
BSO 315 C
8.0
Ptot = 2.00W
h
VGS [V] a 2.5
b 2.7 3.0 3.2
-6.0
A
Ptot = 2.00W
VGS [V] a -2.5
A
-5.0 -4.5 -4.0
g
b
-2.7 -3.0 -3.2 -3.5 -3.7 -4.0
6.0
g
c d
fc
d
ID
ID
5.0
f
e f g h
3.5 3.7 4.0 4.2
e
e f g
-3.5 -3.0
d
4.0
e
-2.5 3.0 -2.0 2.0
c b d c
-1.5
b
-1.0 -0.5
1.0
0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V
a
5.0
0.0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V
a
-5.0
VDS
VDS
Typ. drain-source-on-resistance (N-Ch.)
Typ. drain-source-on-resistance (P-Ch.)
RDS(on) = f (ID)
parameter: VGS
BSO 315 C
RDS(on) = f (ID )
parameter: VGS
BSO 315 C
0.36
0.80
c d e f g b c d e f
0.60
0.28
RDS(on)
0.24 0.20
RDS(on)
0.50
0.40 0.16 0.30 0.12 0.08 0.04
VGS [V] =
c 3.0 d 3.2 e f 3.5 3.7 g 4.0 h 4.2
0.20
h
g
0.10 VGS [V] =
b c d e f -2.7 -3.0 -3.2 -3.5 -3.7 g -4.0
0.00 0.0
1.0
2.0
3.0
4.0
5.0
A
7.0
0.00 0.0
-1.0
-2.0
-3.0
-4.0
C
-5.5
ID
Page 7
Tj
1999-09-22
Preliminary data Typ. transfer characteristics (N-Ch.) parameter: tp = 80 s I D = f (VGS), V DS 2 x I D x R DS(on)max
8
BSO 315 C
Typ. transfer characteristics (P-Ch.) parameter: tp = 80 s ID = f (VGS ), VDS 2 x ID x RDS(on)max
-6
A A
6 -4
ID
5
4
ID
-3 -2 -1 1 2 3 4 5 7 0 0
3
2
1
0 0
VGS
V
-1
-2
-3
-4
-5
VGS
V
-7
Typ. forward transconductance (N-Ch.)
Typ. forward transconductance (P-Ch.)
gfs = f(ID); T j = 25 C
parameter: g fs
8
gfs = f(ID); Tj = 25 C
parameter: gfs
8
S
S
6
6
gfs
5
gfs
1 2 3 4 5 6 7 8
5
4
4
3
3
2
2
1
1
0 0
A 10 ID
0 0
1
2
3
4
5
6
7
8
A 10 ID
Page 8
1999-09-22
Preliminary data Drain-source on-resistance (N-Ch.)
BSO 315 C
Drain-source on-resistance (P-Ch.)
RDS(on) = f (Tj)
parameter : I D = 3.4 A, V GS = 10 V
BSO 315 C
RDS(on) = f(Tj )
Parameter: ID = -2.3 A, VGS = -10 V
0.50
0.32
0.24
0.40
RDS(on)
RDS(on)
0.35 0.30 0.25
0.20
98%
0.16
98%
0.12 0.20
typ
0.15 0.08
typ
0.10
0.04
0.05 0.00 -60
0.00 -60
-20
20
60
100
C
180
-20
20
60
100
Tj
160 C Tj
Gate threshold voltage (N-Ch.)
Gate threshold voltage (P-Ch.)
VGS(th) = f (T j)
parameter: VGS = VDS, ID = 20 A
3.0
VGS(th) = f (Tj)
parameter: VGS = VDS , ID = -230 A
-3.0
V
2.5
V
V GS(th)
2.0 1.8 1.5 1.2 1.0 0.8 0.5 0.2 0.0 -60 -20 20
98%
V GS(th)
2.2
-2.0
98%
typ
-1.5
2%
typ
-1.0
2%
-0.5
60
100
C
160
0.0 -60
-20
20
60
100
Tj
Page 9
160 C Tj
1999-09-22
Preliminary data Typ. capacitances (N-Ch.) Typ. capacitances (P-Ch.)
BSO 315 C
C = f(VDS)
parameter: VGS=0 V, f=1 MHz
10 3
C = f(VDS )
parameter: VGS =0 V, f=1 MHz
10 4
pF pF
Ciss
10 3
C
10 2
Coss Crss
10 2
C
Ciss Coss Crss
10 1 0
5
10
15
20
25
30
V
40
10 1 0
-5
-10
-15
-20
-25
-30
V
-40
VDS
VDS
Forward characteristics of reverse diode
Forward characteristics of reverse diode
I F = f (VSD), (N-Ch.)
parameter: Tj , tp = 80 s
10
2
IF = f (VSD ), (P-Ch.)
parameter: Tj , tp = 80 s
-10 1
BSO 315 C
BSO 315 C
A
A
10 1
-10 0
IF
10 0
IF
-10 -1
Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%)
10 -1 0.0 2.4 V -10 -2 0.0
Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%)
-2.4 V
0.4
0.8
1.2
1.6
2.0
3.0
-0.4
-0.8
-1.2
-1.6
-2.0
-3.0
VSD
Page 10
VSD
1999-09-22
Preliminary data Avalanche Energy EAS = f (Tj) (N-Ch.) parameter: ID = 2.9 A, VDD = 25 V RGS = 25
30
BSO 315 C
Avalanche Energy EAS = f (Tj ) parameter: ID = -1.8 A, VDD = -25 V RGS = 25
40
mJ mJ
30
E AS
EAS
C
20
25
15
20
15 10 10 5 5
0 25
45
65
85
105
125
165
0 25
45
65
85
105
125
C
165
Tj
Tj
Typ. gate charge (N-Ch.)
Typ. gate charge (P-Ch.)
VGS = f (QGate) parameter: ID = 3.4 A
BSO 315 C
VGS = f (QGate) parameter: ID = -2.3 A
BSO 315 C
16
-16
V
V
12
-12
VGS
10
VGS
0,2 VDS max 0,8 VDS max
-10
8
-8 0,2 VDS max 0,8 VDS max
6
-6
4
-4
2
-2
0 0
2
4
6
8
nC
12
0 0
2
4
6
8
nC
11
QGate
Page 11
QGate
1999-09-22
Preliminary data Drain-source breakdown voltage
BSO 315 C
Drain-source breakdown voltage
V(BR)DSS = f (Tj), (N-Ch.)
BSO 315 C
V(BR)DSS = f (Tj ), (P-Ch.)
BSO 315 C
37
-37
V
V
35
-35
V(BR)DSS
34 33 32 31 30 29 28 27 -60
V(BR)DSS
-34 -33 -32 -31 -30 -29 -28 -27 -60
-20
20
60
100
C
180
-20
20
60
100
C
180
Tj
Tj
Page 12
1999-09-22
Preliminary data
Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved.
BSO 315 C
Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Page 13
1999-09-22

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